? 2002 ixys corporation, all rights reserved ds98884(01/02) hiperrf tm power mosfets f-class: megahertz switching features z rf capable mosfets z double metal process for low gate resistance z rugged polysilicon gate cell structure z unclamped inductive switching (uis) rated z low package inductance z fast intrinsic rectifier applications z dc-dc converters z switched-mode and resonant-mode power supplies, >500khz switching z dc choppers z 13.5 mhz industrial applications z pulse generation z laser drivers z rf amplifiers advantages z space savings z high power density v dss = 500v i d25 = 21a r ds(on) 250m t rr 250ns n-channel enhancement mode avalanche rated, low q g , low intrinsic r g , high dv/dt, low t rr IXFH21N50F ixft21n50f symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c, r gs = 1m 500 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c21a i dm t c = 25 c, pulse width limited by t jm 84 a i ar t c = 25 c21a e as t c = 25 c 1.5 j dv/dt i s i dm , di/dt < 100a/ s, v dd v dss 10 v/ns t j 150 c, r g = 2 p d t c = 25 c 300 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold plastic body for 10s 260 c m d mounting torque (to-247) 1.13/10 nm/lb.in. weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 4ma 3.0 5.5 v i gss v gs = 20v, v ds = 0v 100 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 1.5 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 250 m g = gate d = drain s = source tab = drain to-268 (ixft) g s to-247 (ixfh) tab tab
ixys reserves the right to change limits, test conditions, and dimensions. IXFH21N50F ixft21n50f note: 1. pulse test, t 300 s, duty cycle d 2 % ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 12 17 s c iss 2600 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 470 pf c rss 160 pf t d(on) 16 ns t r 12 ns t d(off) 36 ns t f 7.7 ns q g(on) 77 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 21 nc q gd 40 nc r thjc 0.42 c /w r thcs (to-247) 0.21 c /w source-drain diode characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0v 21 a i sm repetitive, pulse width limited by t jm 84 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1.2 c i rm 10 a i f = 21a, -di/dt = 100a/ s v r = 100v, v gs = 0v dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 (ixfh) outline to-268 outline min recommended footprint resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 r g = 2 (external)
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